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Mechanical and Electrical Properties of Ga-Doped ZnO Films Deposited on Flexible Substrate by DC Magnetron Sputtering

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Abstract:

Ga-doped ZnO films were deposited on polyethylene terephthalate (PET) substrate by dc magnetron sputtering using a high density GZO target (doped with 6.65 wt% Ga2O3) without substrate heating. We investigated electrical, structural, and mechanical properties of GZO films deposited under various total gas pressures (Ptot). GZO films deposited at Ptot of 2.0 Pa showed the lowest resistivity (2.91 x 10-2 7cm), which could be attributed to higher crystallinity of the film. Also, this GZO film showed the lowest change in resistance (8 R/R0 = 0.3) for the dynamic bending test.

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Periodical:

Materials Science Forum (Volume 569)

Pages:

185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.569.185

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Online since:

January 2008

Authors:

Dong Yeop Lee, Jung Rak Lee, Do Geun Kim, Gun Hwan Lee, Young Seok Kim, Pung Keun Song

Keywords:

Bending Tests, DC Magnetron Sputtering, GZO, Mechanical Property, Polymer Substrate

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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