The Electrical Properties of PLZT Thin Films on ITO Coated Glass with Various Post-Annealing Temperature

Won Hyo Cha; Ji Eon Yoon; Dong Hyun Hwang; Chul Su Lee; In Seok Lee; Young Gook Son

doi:10.4028/www.scientific.net/MSF.569.169

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HomeMaterials Science ForumMaterials Science Forum Vol. 569The Electrical Properties of PLZT Thin Films on...

The Electrical Properties of PLZT Thin Films on ITO Coated Glass with Various Post-Annealing Temperature

Abstract:

Lanthanum modified lead zirconate titanate (Pb1.1La0.08Zr0.65Ti0.35O3) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by r.f magnetron sputtering method. The thin films were deposited at 500°C and annealed at various temperature (550~600°C) by rapid thermal processing. The structure and morphology of the films were characterized with X-ray diffraction and atomic force microscopy. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature increased, the remnant polarization value increased from 10.58 DC/cm2 to 31.35 DC/cm2, coercive field was reduced from 79.906 kV/cm to 60.937 kV/cm. For the switching polarization endurance analysis, the remnant polarization of PLZT thin films annealed at 700°C was decreased 15% after 109 switching cycles using 1MHz square wave form at 5V.