Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

Sung Pill Nam; Sung Gap Lee; Young Hie Lee

doi:10.4028/www.scientific.net/MSF.569.73

Paper Titles

High Temperature Oxidation of WC-CrN Superhard Nanocomposite Film
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Synthesis of MgO Thin Film Deposited on Soda Lime Glass by Sol-Gel Process
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Study on the Recognition of the Registration Marks for Low-Energy Microcolumn Lithography
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Properties of Nano-Hybrid Sol-Gel Coating Films Synthesized with Colloidal Silica and Organoalkoxy Silanes
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Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO₂/SiO₂/Si Substrates
p.73

Synthesis of Nickel Coated Gadolinia Doped Ceria Nanopowder by Microwave Radiation
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Analysis of Cell Toxic Experiments in New Synthetic Compounds from Nano-Scaled Collagen
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Corrosion Resistance of TiAlN/ZrN and TiCrN/ZrN Multilayers during Heat Treatment
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Mechanical Performances of ZTM/SiC Nanocomposite Optimized through Composition and Microstructure Tailoring
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HomeMaterials Science ForumMaterials Science Forum Vol. 569Structural and Electrical Properties of Vanadium...

Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO₂/SiO₂/Si Substrates

Abstract:

The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.