Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

Abstract:

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The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

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Periodical:

Edited by:

Byungsei Jun, Hyungsun Kim, Chanwon Lee, Soo Wohn Lee

Pages:

73-76

DOI:

10.4028/www.scientific.net/MSF.569.73

Citation:

S. P. Nam et al., "Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates ", Materials Science Forum, Vol. 569, pp. 73-76, 2008

Online since:

January 2008

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$35.00

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