Control of Crystallographic Orientation and Grain Refinement in Bi2Te3-Based Thermoelectric Semiconductors by Applying High Pressure Torsion

Maki Ashida; Takashi Hamachiyo; Kazuhiro Hasezaki; Hirotaka Matsunoshita; Masaaki Kai; Z. Horita

doi:10.4028/www.scientific.net/MSF.584-586.1006

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Control of Crystallographic Orientation and Grain Refinement in Bi₂Te₃-Based Thermoelectric Semiconductors by Applying High Pressure Torsion
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Control of Crystallographic Orientation and Grain Refinement in Bi₂Te₃-Based Thermoelectric Semiconductors by Applying High Pressure Torsion

Abstract:

Prepared were p-type Bi2Te3-based thermoelectric semiconductors, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high pressure torsion (HPT). The crystal orientation was characterized with X-ray diffraction. The microstructures were characterized by using optical microscopy and scanning electron microscopy. It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective for improving the thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.