Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading

Hsiang Chen Hsu; Hui Yu Lee; Wen Lo Shieh

doi:10.4028/www.scientific.net/MSF.594.175

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Underfill Injection Molding in Flip-Chip Packaging with Different Bumps Array Arrangements
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Finite Element Prediction of Stack-Die Packages under Board Level Drop Test
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Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading
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Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives
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HomeMaterials Science ForumMaterials Science Forum Vol. 594Reliability of SnAgCu Alloys for CMOS Image Sensor...

Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading

Abstract:

A three-dimensional finite element model of CMOS image sensor QFN packaging using ANSYS codes is developed to investigate the solder joint reliability under thermal cycle test. The predicted thermal-induced displacements were found to be very good agreement with the Moiré interferometer experimental in-plane deformations. The developed finite element model is then applied to predict fatigue life of Sn4.0Ag0.5Cu, Sn3.5Ag0.5Cu and Sn3.9Ag0.6Cu alloys based on JEDEC standard JESD22-A104. In order to save computational time and produce satisfactory results in the region of interest, an independent more finely meshed so-called submodel scheme based on cut-boundary displacement method is generated. The mesh density for different area ratio of refinery/coarse model was verified and the results were found to be good agreement with previous researches. The modified Coffin-Manson equation and strain energy density based equation are applied to evaluate the reliability of SnAgCu alloys. A series of comprehensive parametric studies were conducted in this paper.