Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD

Jin She Yuan; Guo Hao Yu; Chang Min Yang; Ming Yue Wang

doi:10.4028/www.scientific.net/MSF.610-613.446

Paper Titles

Research on Technology of Blast Furnace Energy Saving and Optimization of Operation Principle
p.419

Structural Study on Ammonia Borane for Hydrogen Storage
p.425

Segregation Effect on Nanoscale Mg - Based Hydrogen Storage Materials
p.431

Synthesis and Transport Properties of Polycrystalline Co-Filled Type-I Clathrate Compound (Sr,Ba)₈Ga₁₆Ge₃₀
p.441

Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD
p.446

Application of ANN Back-Propagation for Fracture Design Parameters in Extra-Low Cycle Rotating Bending Fatigue
p.450

Processing 20 Ply Clad Plate by Accumulative Clad Rolling from Stainless Steel/Aluminum/Aluminum Alloy…/Stainless Steel Sheets
p.454

Preparation of Nanosize Iron Pyrite FeS₂ and its Properties
p.459

Antibacterial Behavior of Ag-Ce-TiO₂ Composite Films in the Different Irradiations
p.463

HomeMaterials Science ForumMaterials Science Forum Vols. 610-613Deposition and Characterization of GaN Films on...

Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD

Abstract:

The GaN film deposited on ITO glass substrate by PECVD was characterized using XPS, SEM and reflectance spectra. XPS analysis indicated that the chemical status of the film surface was predominated in mixture phase of GaN and Ga2O3. It was observed that Tthe film annealed at 400°C exhibited platelet-shaped and hexagonal structure and c-plane textured morphology from SEM images. The reflectance spectra show that the absorption cutoff wavelength of the sample annealed at 400 °C was broadened to 1100nm roughly. From the results, Iit is concluded that the GaN film grown on ITO glass substrate by PECVD will be a promising full spectra material.