Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

Guo Dong Sun; He Jun Li; Shou Yang Zhang; Qian-Gang Fu; Wei Cao; Yan Qiong Jiao

doi:10.4028/www.scientific.net/MSF.610-613.635

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Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

Abstract:

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.