Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

Abstract:

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A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.

Info:

Periodical:

Materials Science Forum (Volumes 610-613)

Main Theme:

Edited by:

Zhong Wei Gu, Yafang Han, Fu Sheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou

Pages:

635-640

DOI:

10.4028/www.scientific.net/MSF.610-613.635

Citation:

G. D. Sun et al., "Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition", Materials Science Forum, Vols. 610-613, pp. 635-640, 2009

Online since:

January 2009

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Price:

$35.00

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