Study on the Evolution of Surface Morphology of Hetero-Epitaxy Growth of ZnO Thin Film

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Abstract:

Nano-granular ZnO thin films were deposited on Si (100) by molecular beam epitaxy (MBE) by varying growth time. The atomic force microscopy (AFM) and Raman scattering experiments were performed to study the surface morphology and vibrational properties of ZnO layer. The results show that the ZnO thin film grows in the Stranski-Kranstanow (SK) mode, and the critical thickness in our experimental condition is between 5.5 and 8.2 nm.

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Materials Science Forum (Volumes 663-665)

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1205-1208

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November 2010

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] R.F. Service: Science Vol. 276 (1997), p.895.

Google Scholar

[2] W.Y. Liang and A.D. Yoffe: Phys. Rev. Lett. Vol. 20 (1968), p.59.

Google Scholar

[3] T. Ohgaki, N. Ohashi, H. Kakemoto and S. Wada, Y. Adachi, H. Haneda and T. Tsurumi: Journal of Applied Physics Vol. 93 (2003), p. (1961).

DOI: 10.1063/1.1535256

Google Scholar

[4] A. Wang, J. Cheng, M.P. Chudzik, T.J. Marks, R.P.H. Chang and C.R. Kannewurf: Appl. Phys. Lett. Vol. 73 (1998), p.327.

Google Scholar

[5] A.B.M. Almamun, N.T. Binh, B. -Q. Zhang and Y. Segawa: Appl. Phys. Lett. Vol. 84 (2004), p.2814.

Google Scholar

[6] F.K. Shan, B.C. Shin, S.W. Jang and Y.S. Yu: Journal of the European Ceramic Society Vol. 24 (2004), p.1015.

Google Scholar

[7] R. Ghosh and D. Basak and S, Fujihara: Journal of Applied Physics Vol. 96 (2004), p.2689.

Google Scholar

[8] S. Park, T.S. Cho, S.J. Doh, J.L. Lee and J.H. Je: Applied Physics Letters Vol. 77 (2000), p.349.

Google Scholar

[9] T. Gruber, G.M. Prinz, C. Kirchner, R. Kling, F, Reuss, W. Limmer and A. Waag: Journal of Applied Physics Vol. 96 ( 2004), p.289.

DOI: 10.1063/1.1755433

Google Scholar

[10] T.C. Damen, S.P.S. Porto, and B. Tell: Phys. Rev. Vol. 142 (1966), p.570.

Google Scholar

[11] V.Y. Davydov, N.S. Averkiev, I.N. Goncharuk, D.K. Nelson, I.P. Nikitina, A.S. Polkovnikov, A.N. Smirnov, M.A. Jacobson and O.K. Semchinova: Journal of Applied Physics Vol. 82 (1997), p.5097.

DOI: 10.1063/1.366310

Google Scholar