The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

Chao Song; Rui Huang

doi:10.4028/www.scientific.net/MSF.663-665.324

Paper Titles

Synthesis and Photophysical Properties of Novel Polystyrene Derivatives Containing Oligofluorene Pendants
p.308

Effect of Various CF₄/CH₄ Flow Ratios on Structure and Optical Band Gap of Fluorinated Diamond-Like Carbon Thin Films
p.312

Synthesis and Luminescence Properties of 1,10-Phenanthroline Terbium/Polyvinyl Alcohol Hybrid Functional Materials
p.316

Synthesis and Infrared Transmittance of Curved Surface Diamond Film
p.320

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films
p.324

Near-Infrared-to-Green Upconversion in Yb³⁺/Er³⁺ Co-Doped BaYF₅ by Chemical Co-Precipitation Method
p.328

Photoluminescence of Eu³⁺-Doped La₂Mo₂O₉ Phosphors
p.332

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures
p.336

Aurora Intensity Conversion and Distribution Simulation
p.340

HomeMaterials Science ForumMaterials Science Forum Vols. 663-665The Study on Microstructural and Optical...

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

Abstract:

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.