Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

Jie Song; Yan Qing Guo; Xiang Wang; Yi Xiong Zhang; Chao Song; Rui Huang

doi:10.4028/www.scientific.net/MSF.663-665.336

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Photoluminescence Characteristics of Silicon...

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

Abstract:

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

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Materials Science Forum (Volumes 663-665)

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336-339

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.336

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Online since:

November 2010

Authors:

Jie Song, Yan Qing Guo, Xiang Wang, Yi Xiong Zhang, Chao Song, Rui Huang

Keywords:

Photoluminescence (PL), Silicon Oxynitride, VHF PECVD

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