Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

Abstract:

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Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

336-339

DOI:

10.4028/www.scientific.net/MSF.663-665.336

Citation:

J. Song et al., "Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures", Materials Science Forum, Vols. 663-665, pp. 336-339, 2011

Online since:

November 2010

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Price:

$35.00

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