Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures
Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.
Yuan Ming Huang
J. Song et al., "Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures", Materials Science Forum, Vols. 663-665, pp. 336-339, 2011