Exploration in the Two-Photon Absorption Effect of Silicon Based Films

Abstract:

Article Preview

In this work, the crystallization of different silicon based thin films as the precursor of crystallization was investigated by femto-second laser with 800 nm wavelength. The linear absorption coefficient of a-Si films at that wavelength is quit lower than the other structures of Si-based thin film, which has no related with the incident light energy. However, we found that the crystallization of a-Si films was better than μc-Si films as the precursor. We use Z-scan techniques to prove that the two-photon absorption effect would be responsible for the crystallization. And unlike the linear absorption, the two-photon absorption effect is correlated with the incident light energy, as well as the micro-structure of the silicon based film. At the end of the paper, the crystallization by laser with wavelength longer than the absorption limit was discussed.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

348-351

DOI:

10.4028/www.scientific.net/MSF.663-665.348

Citation:

M. Yang et al., "Exploration in the Two-Photon Absorption Effect of Silicon Based Films", Materials Science Forum, Vols. 663-665, pp. 348-351, 2011

Online since:

November 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.