Exploration in the Two-Photon Absorption Effect of Silicon Based Films

Abstract:

In this work, the crystallization of different silicon based thin films as the precursor of crystallization was investigated by femto-second laser with 800 nm wavelength. The linear absorption coefficient of a-Si films at that wavelength is quit lower than the other structures of Si-based thin film, which has no related with the incident light energy. However, we found that the crystallization of a-Si films was better than μc-Si films as the precursor. We use Z-scan techniques to prove that the two-photon absorption effect would be responsible for the crystallization. And unlike the linear absorption, the two-photon absorption effect is correlated with the incident light energy, as well as the micro-structure of the silicon based film. At the end of the paper, the crystallization by laser with wavelength longer than the absorption limit was discussed.

• Periodical: Materials Science Forum (Volumes 663-665)
• Pages: 348-351
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.663-665.348
• Online since: November 2010
• Authors: Ming Yang, Juan Li, Ying Yao, Chun Jian Yin, Chun Ya Wu, Xiao Nong Zhu, Zhi Jun Xu, Shao Zhen Xiong
• Keywords: Femto-Second Laser, Laser Crystallization, Silicon Based Film, Two-Photon Absorption, Z-Scan

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