Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

Abstract:

Article Preview

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

572-575

DOI:

10.4028/www.scientific.net/MSF.663-665.572

Citation:

H. F. Liu et al., "Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering", Materials Science Forum, Vols. 663-665, pp. 572-575, 2011

Online since:

November 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.