Electrical Properties of Hydrogen Terminated P-Type Diamond Film

Abstract:

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Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

625-628

DOI:

10.4028/www.scientific.net/MSF.663-665.625

Citation:

F. Y. Xia et al., "Electrical Properties of Hydrogen Terminated P-Type Diamond Film", Materials Science Forum, Vols. 663-665, pp. 625-628, 2011

Online since:

November 2010

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Price:

$35.00

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