Electrical Properties of Hydrogen Terminated P-Type Diamond Film

Fu Yuan Xia; Lin Jun Wang; Jian Huang; Ke Tang; Ji Jun Zhang; Wei Min Shi

doi:10.4028/www.scientific.net/MSF.663-665.625

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Electrical Properties of Hydrogen Terminated...

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

Abstract:

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

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Materials Science Forum (Volumes 663-665)

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625-628

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https://doi.org/10.4028/www.scientific.net/MSF.663-665.625

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Online since:

November 2010

Authors:

Fu Yuan Xia, Lin Jun Wang, Jian Huang, Ke Tang, Ji Jun Zhang, Wei Min Shi

Keywords:

Annealing, Diamond Film, Hydrogen Plasma, MPCVD

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