Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

Abstract:

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Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

654-657

DOI:

10.4028/www.scientific.net/MSF.663-665.654

Citation:

G. W. Wang et al., "Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si", Materials Science Forum, Vols. 663-665, pp. 654-657, 2011

Online since:

November 2010

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Price:

$35.00

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