Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

Abstract:

Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

• Periodical: Materials Science Forum (Volumes 663-665)
• Pages: 654-657
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.663-665.654
• Online since: November 2010
• Authors: Guang Wei Wang, Hong Xing Zheng, Su Ying Yao, Feng Shan Zhang
• Keywords: Diffusion, Electric Field Aided Lateral Crystallization, Electromigration Effect, Grain Coarsening

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