Influence of Al2O3 Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering

Wu Tang; Yi Peng Chao; Yong Si Fang; Xiao Long Weng; Long Jiang Deng

doi:10.4028/www.scientific.net/MSF.675-677.1209

Paper Titles

Effect of Negative Pulse Voltage on the Microstructure and Corrosion Resistance of Microarc Oxidation Film of A356 Aluminum Alloy
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Preparation and Properties of the Organic-Inorganic Composite Coating on Aluminum Alloy
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Internal Stress and Grain Size Effect on the Phase Stabilization of ZrO₂ Deposited by MOCVD
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Enhanced Surface Properties Induced by High Current Pulsed Electron Beam (HCPEB) Treatment
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Influence of Al₂O₃ Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering
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The Fabrication of W-Cu Modified Layers on the Surface of the Continuous Casting Machine Mould Copper Plate by Infiltration
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A Method for Ultrasonic Characterization of Density, Thickness and Velocity of Homogeneous Coating
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Correlating Ultrasonic Velocity and Porosity Using FDTD Method Based on Random Pores Model
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ZrC-Zr₂Si Coating on Carbon Fiber Reinforced Silicon Carbide Matrix Composites Prepared by Pack Cementation Method
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Influence of Al₂O₃ Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering

Abstract:

Indium Tin Oxide (ITO) films on PET substrate sandwiching Al2O3 buffer layers with different thickness have been prepared by magnetron sputtering at low deposition temperature. The crystal structures, electrical and optical properties of ITO films have been investigated by XRD, four-point probe technology and UV-Vis spectrophotometer as a function of different Al2O3 buffer layers thickness, respectively. XRD reveals that there is an amorphous structure in ITO films with no buffer layer. However, ITO films became crystalline after sandwiching the buffer layer. It can be found that there are two major peaks, (222) and (400) of ITO film. A smallest resistivity of 3.53×10-4 Ω.cm was obtained for ITO film with Al2O3 buffer layers thickness 75nm. The average transmittance of ITO/Al2O3/PET films in the visible range of 400-760nm wavelength was around 80%. It can be conclude that the (222) orientation of ITO film is more in favor of low resistivity.