Internal Stress and Grain Size Effect on the Phase Stabilization of ZrO₂ Deposited by MOCVD

Abstract:

Zirconia (ZrO2) films were deposited by metal-organic chemical vapor deposition (MOCVD) on {1 0 0} Si single crystal using Zr(thd)4 precursors. The thickness of obtained films is typically of 3.5 μm. The samples have been characterized by Field-Emission-Gun Scanning Electron Microscopy (FEG-SEM) for morphologic and microstructure study, and by X-ray Diffraction (XRD) for crystalline structure. The microstructure analysis showed that unexpected stable single tetragonal phase preferentially grew in low temperature area. According to the literature, the tetragonal phase stabilization is related to the crystalline size and the internal compressive stress. To analyze the effect of grain size and internal stress on the phase transformation, the thermal annealing were carried out in different temperatures and internal stress was measured by XRD method.

• Periodical: Materials Science Forum (Volumes 675-677)
• Pages: 1201-1204
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.675-677.1201
• Online since: February 2011
• Authors: Zhe Chen, Bin Wang, Nathalie Prud’homme, Sheng Li Ma, Vincent Ji, Patrick Ribot
• Keywords: Annealing, MOCVD, Phase Transformation, Tetragonal Phase, Thin Film, Zro₂

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