Effect of the Si3N4 Coating on the Mc-Si Ingot in the Process of Multicrystalline Silicon Purification by Metallurgical Methods
The Si3N4 protective coating has an important impact on avoiding melting silicon from contacting with the crucible wall directly. A mixed Si/Si3N4 layer was formed on the interface of silicon and Si3N4 coating, and the declination of N content was observed in this mixed layer. With the ingots condition of 1500oC for 2 h, the large Si3N4 and SiC particles appeared in the mixed layer and the formation mechanism was discussed. The Si3N4 coating had significantly increased the lifetime of minority carriers by decreasing impurity content.
Yi Tan and Dongying Ju
J. Y. Li et al., "Effect of the Si3N4 Coating on the Mc-Si Ingot in the Process of Multicrystalline Silicon Purification by Metallurgical Methods", Materials Science Forum, Vols. 675-677, pp. 1311-1314, 2011