Preparation and Characterization of Cu2ZnSnSe4 Thin Films by Selenization of Electrodeposited Metal Precursors

Abstract:

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Cu2ZnSnSe4 thin films were prepared by selenization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were electrodeposited on the Mo-coated glass substrates from an electrolyte containing copper sulfate, zinc sulfate, tin (II) sulfate at a fixed potential between -1.2V and -1.25V vs. saturated calomel electrode, then the Cu2ZnSnSe4 thin films were obtained by selenizing Cu-Zn-Sn precursors in elemental selenium atmosphere at different temperatures. The structure, composition and optical properties of the films were investigated by X-ray diffraction, Energy dispersive spectrometry and UV-VIS absorption spectroscopy. The CZTSe films have a stannite structure and an optical band-gap about 1.6 eV which is suitable for fabricating solar cells.

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Periodical:

Edited by:

Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao

Pages:

105-109

DOI:

10.4028/www.scientific.net/MSF.685.105

Citation:

J. Li et al., "Preparation and Characterization of Cu2ZnSnSe4 Thin Films by Selenization of Electrodeposited Metal Precursors", Materials Science Forum, Vol. 685, pp. 105-109, 2011

Online since:

June 2011

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$35.00

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