p.76
p.82
p.87
p.98
p.105
p.110
p.114
p.119
p.123
Preparation and Characterization of Cu2ZnSnSe4 Thin Films by Selenization of Electrodeposited Metal Precursors
Abstract:
Cu2ZnSnSe4 thin films were prepared by selenization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were electrodeposited on the Mo-coated glass substrates from an electrolyte containing copper sulfate, zinc sulfate, tin (II) sulfate at a fixed potential between -1.2V and -1.25V vs. saturated calomel electrode, then the Cu2ZnSnSe4 thin films were obtained by selenizing Cu-Zn-Sn precursors in elemental selenium atmosphere at different temperatures. The structure, composition and optical properties of the films were investigated by X-ray diffraction, Energy dispersive spectrometry and UV-VIS absorption spectroscopy. The CZTSe films have a stannite structure and an optical band-gap about 1.6 eV which is suitable for fabricating solar cells.
Info:
Periodical:
Pages:
105-109
Citation:
Online since:
June 2011
Authors:
Keywords:
Price:
Сopyright:
© 2011 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: