Numerical Simulation Analysis of Temperature Field on Silicon Carbide Synthesis Furnace

Abstract:

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Based on heat percolation theory and thermal coefficient equation of various layer-compositors, the effective thermal conductivity of silicone carbide(SiC)synthetic material was obtained, and the effective heat capacity under the complicated thermal effect in the process of raising temperature figured out in the present investigation. Based on the experimental results and using the finite element numerical model of nonlinear dynamic heat transfer process, the temperature field in SiC synthesis furnace was simulated by open source finite element software-FECsoft. And the dynamic laws of temperature distribution and thermal gradient of the furnace, the relation between the furnace core’s temperature and the energy consumption and output were obtained. Based on the above analysis, some measures to save energy and increasing output of the silicon carbide synthesis furnace were proposed in this paper.

Info:

Periodical:

Edited by:

Yafang Han, Fusheng Pan, Jianmao Tang, Chungen Zhou

Pages:

494-500

DOI:

10.4028/www.scientific.net/MSF.686.494

Citation:

Y. G. Li et al., "Numerical Simulation Analysis of Temperature Field on Silicon Carbide Synthesis Furnace", Materials Science Forum, Vol. 686, pp. 494-500, 2011

Online since:

June 2011

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Price:

$35.00

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