Growth and Transport Properties of Sr-Doped Lanthanum Titanate Thin Films on LaAlO₃

Abstract:

Sr-doped LaTiO₃ (SLTO) thin epitaxial films on LaAlO₃ (100) have been fabricated by the off-axis rf magnetron co-sputtering system. The dopant Sr²⁺ ions were expected substituting La³⁺ ions in the films to introduce the hole carriers. The X-ray diffraction shows that the [001] direction of the SLTO films is perpendicular to the substrate surface. The in-situ grown specimens were measured the temperature dependence of resistivity and the Hall coefficients to study the transport properties. The Hall measurements show that the carrier is electron for Sr-doping over 16%. The temperature dependence of the resistance shows that the n-type films are metallic and deviate from free electron gas model obviously. We found the behaviour could be well described by the small-polaron coherent motion model.

• Periodical: Materials Science Forum (Volume 700)
• Pages: 41-44
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.700.41
• Online since: September 2011
• Authors: Huang Huei Sung, Jiun Tzuen Tsai, Cheng Hsueh Lin, Shing Yu Chen, Jung Chuan Fan, Chun Rong Lin
• Keywords: Antiferromagnetic, SLTO, Small-Polaron Model, Sr-Doped LaTiO₃, Thin Film, Transport Property

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