Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films

Abstract:

Article Preview

We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.

Info:

Periodical:

Edited by:

B. J. Ruck and T. Kemmitt

Pages:

49-52

DOI:

10.4028/www.scientific.net/MSF.700.49

Citation:

P. P. Murmu et al., "Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films", Materials Science Forum, Vol. 700, pp. 49-52, 2012

Online since:

September 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.