Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films

Abstract:

We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ^ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ^ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.

• Periodical: Materials Science Forum (Volume 700)
• Pages: 49-52
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.700.49
• Online since: September 2011
• Authors: Peter P. Murmu, John Kennedy, Ben J. Ruck, Andreas Markwitz
• Keywords: AFM, Carrier Concentration, Ion Beam Sputtering, Resistivity, X-Ray Diffraction (XRD), Zinc Oxide (ZnO)

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