Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films
We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.
B. J. Ruck and T. Kemmitt
P. P. Murmu et al., "Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films", Materials Science Forum, Vol. 700, pp. 49-52, 2012