Compromising Effect on Development of Recrystallization Texture in Aluminium Sheet – A 2D MC Type Simulation –

Abstract:

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The migration rates of C->Si, Si->C, and Si->Sj were assumed to be high and those of Si->Si and all other rates to be low. Here Si(i=1,2,3,4) is a variant of S orientation and C->Si means the growth of a cube grain into an Si grain. The textural development through grain coarsening was simulated as a function of the ratio of the high rate to the low one. The compromising effect surely promotes the development of the cube texture but its decisive development requires any asymmetry between C->Si and Si->C migration processes.

Info:

Periodical:

Materials Science Forum (Volumes 702-703)

Edited by:

Asim Tewari, Satyam Suwas, Dinesh Srivastava, Indradev Samajdar and Arunansu Haldar

Pages:

655-658

DOI:

10.4028/www.scientific.net/MSF.702-703.655

Citation:

K. Ito "Compromising Effect on Development of Recrystallization Texture in Aluminium Sheet – A 2D MC Type Simulation –", Materials Science Forum, Vols. 702-703, pp. 655-658, 2012

Online since:

December 2011

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$35.00

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