Elemental Distribution Characteristics Across γ-TiAl:TiAlV Diffusion Bond Interface

Abstract:

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In the present study diffusion bonding of γ-TiAl intermetallic with Ti-6Al-4V alloy was carried out in high vacuum. The diffusion bonding was performed at temperatures of 800°C and 850°C under the constant pressure of 40MPa and at varying time. The interfacial microstructure formed during the diffusion bonding was analysed by SEM and TEM. The elemental distribution characteristics across the interface were also studied by X-ray EDS analysis. From EDS results obtained, some regions were rich in aluminium and some regions were rich in vanadium. Also there are some compositional variations such as chromium and niobium close to the interface zone. However, the composition gradient was not gradual across the interface. Strong evidence has been found for the solute re-distribution in a more localized manner.

Info:

Periodical:

Materials Science Forum (Volumes 702-703)

Edited by:

Asim Tewari, Satyam Suwas, Dinesh Srivastava, Indradev Samajdar and Arunansu Haldar

Pages:

718-721

DOI:

10.4028/www.scientific.net/MSF.702-703.718

Citation:

P. Sivagnanapalani et al., "Elemental Distribution Characteristics Across γ-TiAl:TiAlV Diffusion Bond Interface", Materials Science Forum, Vols. 702-703, pp. 718-721, 2012

Online since:

December 2011

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Price:

$35.00

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