Microstructure of the New Route Wire Fabrication of V3Ga Compound Superconducting Wire Using High Ga Content Cu-Ga/V Precursor Composite Material

Satoshi Murakami; Manabu Mizutani; Kenji Matsuda; Katsuhiko Nishimura; Tokimasa Kawabata; Yoshimitsu Hishinuma

doi:10.4028/www.scientific.net/MSF.706-709.677

Paper Titles

Investigating the Potential of TiB₂-Based Composites with Ti and Fe Additives as Wettable Cathode
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Fabrication of Metal-Based Functionally Graded Grinding Wheel by a Centrifugal Mixed-Powder Method
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Microstructure and Superconductive Property of MgB₂/Al Composite Materials
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Degradation Mechanism of Polycrystalline Silicon Carbide Fiber due to Air-Exposure at High Temperatures
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Microstructure of the New Route Wire Fabrication of V₃Ga Compound Superconducting Wire Using High Ga Content Cu-Ga/V Precursor Composite Material
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Forming Potential of Steel/Polymer/Steel Sandwich Composites with Local Plate Inserts
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Mechanical Properties, Aging Behavior and Microstructure Evolution of Mg-Nd-Zn-Zr Based Magnesium Matrix Composite Reinforced with Alumina Fibers
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Functionally Graded Biocomposites
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Fabrication of Vapor Grown Carbon Fiber Reinforced Aluminum Composites by Spark Sintering
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Microstructure of the New Route Wire Fabrication of V₃Ga Compound Superconducting Wire Using High Ga Content Cu-Ga/V Precursor Composite Material

Abstract:

Our co-worker, Hishinuma et. al. has established a new route Powder-In-Tube (PIT) process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V₃Ga compound wire. In this study, we investigated microstructure of this high Ga content Cu-Ga/V composite superconducting wire. The different contrasts of matrix, V-Ga phase and Cu-Ga core were observed by SEM observation in cross section of 19 multifilamentary wire. And V-Ga phase was confirmed by SEM mapping. The area fraction of V-Ga phase increased when Ga content increased from 30% to 50%. Thin film sample with V-Ga phase for TEM was fabricated by FIB and observed by TEM in detail. Selected area diffraction pattern was obtained for V matrix, V-Ga phase and Cu-Ga core. The ratio of V to Ga for V-Ga phase was probably V₃Ga according to the EDS result. There was a linear interface between V matrix and V-Ga phase, while the interface between Cu-Ga core and V-Ga phase was not linear. On the other hand, there were some granular grains observed in V-Ga phase wear Cu-Ga core.