Mechanism of Secondary Recrystallization in Grain-Oriented Si Steel

Abstract:

On the basis of Hillerts model of grain growth, a new model of Goss secondary recrystallization in silicon steel has been developed in which inhibitor and grain boundary energy are taken into account. An analysis shows that these two parameters synergistically affect secondary recrystallization and Goss grain evolves to a coarse grain as inhibitor intensity increases and statistical grain boundary energy decreases. This model successfully explains Goss secondary recrystallization.

• Periodical: Materials Science Forum (Volumes 715-716)
• Pages: 122-127
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.715-716.122
• Online since: April 2012
• Authors: Yoshiyuki Ushigami, Shuichi Nakamura
• Keywords: CSL Boundary, Goss Texture, Grain Boundary Energy, Grain Growth, Grain-Oriented Silicon Steel, Inhibitor, Secondary Recrystallization

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