Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC

Andreas Hürner; C. Bonse; G. Clemmer; B. Kallinger; T. Heckel; T. Erlbacher; H. Mitlehner; V. Häublein; A.J. Bauer; L. Frey

doi:10.4028/www.scientific.net/MSF.778-780.487

Paper Titles

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ²⁸Si¹²C, Natural and ¹³C – Enriched 4H-SiC
p.471

Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
p.475

Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods
p.479

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
p.483

Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC
p.487

High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
p.491

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
p.495

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
p.499

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
p.503

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Temperature and Electrical Field Dependence of the...

Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC

Abstract:

In this study, we present results on electrical characterization of bipolar pn-diodes to investigate the temperature and electrical field dependent behavior of ambipolar mobility in n-doped 4H-SiC. Therefore, static current-voltage measurements to calculate the specific differential resistance and dynamical reverse recovery measurements to determine the mean carrier concentration were carried out for different temperatures and forward current densities. The specific differential resistance of the drift layer decreased from 10 mΩcm² at 80 Acm^-2 to 6.6 mΩcm² at 180 Acm^-2, whereas the mean carrier concentration only increased from 4^.10¹⁵ cm^-3 to 8^.10¹⁵ cm^-3, indicating a decreasing ambipolar mobility. The calculated reduction of the ambipolar mobility from 800 cm²V^-1s^-1 to 650 cm²V^-1s^-1 in dependence on the current density has to be attributed to an increasing electric field from 150 Vcm^-1 to 250 Vcm^-1 and increasing carrier scattering due to higher carrier concentrations. For example, at a constant conduction current density of 160 Acm^-2, the ambipolar mobility decreases from 710 cm²V^-1s^-1 at 300 K to 650 cm²V^-1s^-1 at 450 K.