Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods

Tomoaki Hatayama; Ryota Hori; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.778-780.479

Paper Titles

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
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Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC
p.467

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ²⁸Si¹²C, Natural and ¹³C – Enriched 4H-SiC
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Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
p.475

Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods
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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
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Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC
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High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
p.491

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Crystallographic Structure of 8H- and 10H-SiC...

Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods

Abstract:

Crystallographic structures of 8H-and 10H-SiC crystals were analyzed by the Raman spectroscopy and diffraction methods. Two and four transverse-optical modes for 8H-and 10H-SiC were observed, and their values were different from those of 4H-and 6H-SiC. Crystallinity for the wide and narrow areas of these crystals was analyzed by the Laue diffraction and the transmission electron microscope, respectively. Based on these results, the stacking sequences of these polytype were discussed.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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479-482

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https://doi.org/10.4028/www.scientific.net/MSF.778-780.479

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Online since:

February 2014

Authors:

Tomoaki Hatayama*, Ryota Hori, Hiroshi Yano, Takashi Fuyuki

Keywords:

10H-SiC, 8H-SiC, Laue Diffraction, Raman Spectroscopy

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