Silicon Carbide and Related Materials 2013

Silicon Carbide and Related Materials 2013

Description:

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 283 papers are grouped as follows:
Chapter 1: SiC Bulk Growth;
Chapter 2: SiC Epitaxial Growth;
Chapter 3: Physical Properties and Characterization of SiC;
Chapter 4: Processing of SiC;
Chapter 5: Devices and Circuits;
Chapter 6: Related Materials.

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Info:

Editors:
Hajime Okumura, Hiroshi Harima, Prof. Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano
THEMA:
TGM
BISAC:
TEC021000
Details:
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Pages:
1246
Book Set:
2 Books set
Year:
2014
ISBN-13 (softcover):
9783038350101
ISBN-13 (CD):
9783037957059
ISBN-13 (eBook):
9783038263913
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Review from Ringgold Inc., ProtoView: The 270 contributed and 13 invited papers report recent research on the wide bandgap semiconductor silicon carbide (SiC) in terms of bulk growth, epitaxial growth, physical properties and characterization, processing, devices and circuits, and related materials. Among individual topics are the crystal growth of highly oriented SiC by chemical vapor deposition with alternating gas supply, correlation between microwave reflectivity and excess carrier concentrations in 4H-SiC, the microstructural analysis of a damaged layer introduced during chemo-mechanical polishing, experimental studies of water vapor plasma oxidation and thermal oxidation of 4H-SiC (0001) for clarifying the atomic-flattening mechanisms in plasma-assisted polishing, a low-cost implantation process with high heat resistant photoresist in fabricating silicon carbide devices, the cryogenic testing and characterization of SiC diodes, modeling high-performance 4H-SiC emitter coupled logic circuits, and high-efficiency power conversion using silicon carbide power electronics. The two volumes are paged and indexed together.

Ringgold Subjects:

— Materials science
— Materials science -- Carbon
— Materials science -- Ceramics
— Materials science -- Composite materials
— Solid state materials and hard matter