This volume collects the papers from the 16^th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials

Silicon Carbide and Related Materials 2013

Edited by: Hajime Okumura, Hiroshi Harima, Prof. Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Online since: February 2014

Description: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 283 papers are grouped as follows:
Chapter 1: SiC Bulk Growth;
Chapter 2: SiC Epitaxial Growth;
Chapter 3: Physical Properties and Characterization of SiC;
Chapter 4: Processing of SiC;
Chapter 5: Devices and Circuits;
Chapter 6: Related Materials.