Interfacial Magnetoelectric Switching in Multiferroic Heterostructures

Abstract:

Novel methods of switching magnetism with electric fields and vice versa, and aiming at magnetoelectric (ME) data processing are reported. First, the patented MERAM^@ uses the electric field control of exchange bias via an epitaxial Cr₂O₃ layer and exchange coupling to a Pt/Co/Pt trilayer. It promises to crucially reduce Joule energy losses in RAM devices. Second, magnetic switching of the electric polarization by a transverse magnetic field in a 3-1 composite of a vertically poled BaTiO₃ thick film embedding CoFe₂O₄ nanopillars produces a regular surface polarization pattern with rectangular symmetry. Its possible use for data processing is discussed.

• Periodical: Materials Science Forum (Volumes 783-786)
• Pages: 1623-1627
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.783-786.1623
• Online since: May 2014
• Authors: Wolfgang Kleemann*, Pavel Borisov, Xi Chen, Carolin Schmitz-Antoniak
• Keywords: Exchange Bias, Magnetoelectric Effect, Magneto-Electric Switching, Multiferroic Composites

References

[1] P. Curie, Sur la symétrie dans les phénomènes physiques, symérie d'un champ électrique et d'un champ magnétique, J. Physique 3 (1894) 393 – 415.

DOI: 10.1051/jphystap:018940030039300

[2] C. Schmitz-Antoniak, D. Schmitz, P. Borisov, F.M.F. de Groot, S. Stienen, A. Warland, B. Krumme, R. Feyerherm, E. Dudzik, W. Kleemann, and H. Wende, Electric in-plane polarization in multi-ferroic CoFe2O4/BaTiO3 nanocomposite tuned by magnetic fields, Nat. Commun. 4: 2051 doi: 10. 1038/ncomms3051 (2013).

DOI: 10.1038/ncomms3051

[3] W. Kleemann, Viewpoint: Switching magnetism with electric fields, Physics 2 (2009) 105.

[4] A. Hochstrat, X. Chen, P. Borisov, and W. Kleemann, Magnetoresistive element, in particular magnetoelectric memory element or logic element and method for writing information to such an element, U.S. Patent 7, 719, 883. B2 (2010).

[5] X. Chen, A. Hochstrat, P. Borisov, and W. Kleemann, Magnetoelectric exchange bias systems in spintronics, Appl. Phys. Lett. 89 (2006) 202508.

DOI: 10.1063/1.2388149

[6] H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, R. Ramesh, Multiferroic BaTiO3-CoFe2O4 nanostructures, Science 303 (2004).

DOI: 10.1126/science.1094207

[7] Xi He, Yi Wang, Ning Wu, A. Caruso, E. Vescovo, K. D. Belashchenko, P. A. Dowben, C. Binek, Robust isothermal electric control of exchange bias at room temperature, Nature Mater. 9 (2010) 579 – 585.

DOI: 10.1038/nmat2785

[8] P. Borisov, A. Hochstrat, X. Chen, W. Kleemann, and C. Binek, Magneto-electric switching of exchange bias, Phys. Rev. Lett. 94 (2005) 117203.

DOI: 10.1103/physrevlett.94.117203

[9] M.N. Baibich et al., Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices, Phys. Rev. Lett. 61 (1988).

DOI: 10.1103/physrevlett.61.2472

[10] M. Budimir, D. Damjanovic, and N. Setter, Piezoelectric anisotropy–phase transition relations in perovskite single crystals, J. Appl. Phys. 94 (2003) 6753 – 6761.

DOI: 10.1063/1.1625080

[11] T.J. Martin and J.C. Anderson, Antiferromagnetic domain switching in Cr2O3, IEEE Trans. Magn. 2 (1966) 466.