Plasticity and Fracture of InP/Si Substructures

Eric Le Bourhis; Konstantinos Pantzas; Gilles Patriarche; Isabelle Sagnes; David Troadec; Anne Talneau

doi:10.4028/www.scientific.net/MSF.783-786.1628

Paper Titles

Thermal Properties of Porous Copper Manufactured by Lost Carbonate Sintering
p.1603

Measuring Threshold Pressure of Melt Magnesium Infiltrating into Al₂O_3sf Porous Preform with Fast Method
p.1609

Atomic Resolution Microscopy of Nitrides in Steel
p.1617

Interfacial Magnetoelectric Switching in Multiferroic Heterostructures
p.1623

Plasticity and Fracture of InP/Si Substructures
p.1628

Effect of Grain Boundary Energy Anisotropy on Faceting and Migration of Low Angle Grain Boundaries
p.1634

Ti and Zr Transition Metals Effect in the D03 Fe3Al by Ab Initio Study Approach
p.1640

Phases Stability of Ni-Mn-Ga Alloys Studied by Ab Initio Calculations
p.1646

Properties of GaN-Related Epitaxial Thin Films Grown on Sapphire Substrates as Transparent Conducting Electrodes
p.1652

HomeMaterials Science ForumMaterials Science Forum Vols. 783-786Plasticity and Fracture of InP/Si Substructures

Plasticity and Fracture of InP/Si Substructures

Abstract:

We report on the mechanical response of semiconductor substructures formed by InP membranes bonded to silicon. The bonded surfaces are of the order of ~ 1 cm2 and were bonded using oxide-free direct wafer bonding. Both the plastic response of the InP membrane and the InP/Si interface strength have been investigated using instrumented nanoindentation.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 783-786)

Pages:

1628-1633

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.783-786.1628

Citation:

Cite this paper

Online since:

May 2014

Authors:

Eric Le Bourhis*, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

Keywords:

Interface Strength, Nanoindentation, Semiconductor Substructure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. Rojo Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J.M. Fedeli, L. Di Cioccio, C. Lagahe-Blanchard, Mater. Today, 10 (2007) 36-43.

DOI: 10.1016/s1369-7021(07)70178-5

Google Scholar

[2] A. W. Fang, H. Park, Y. -h. Kuo, R. Jones, O. Cohen, D. Liang, O. Raday, M. N. Sysak, M. J. Paniccia, J. E. Bowers, Mater. Today, 10 (2007) 28-35.

DOI: 10.1016/s1369-7021(07)70177-3

Google Scholar

[3] J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J. -M. Fedeli, C. Lagahe, R. Baets, Optics Express, 15 (2007) 6744-6749.

DOI: 10.1364/oe.15.006744

Google Scholar

[4] A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudoin, I. Sagnes, G. Patriarche, C. Pang, and H. Benisty, Applied Physics Letters, 102, 212101 (2013).

DOI: 10.1063/1.4807890

Google Scholar

[5] E. Le Bourhis, G. Patriarche, J. Phys. D: Appl. Phys. 41 (2008) 074003.

Google Scholar

[6] E. Le Bourhis, A. Talneau, I. Sagnes, G. Patriarche, L. Largeau and D. Troadec, Mater. Res. Soc. Symp. Proc., 1510 (2013) mrsf12-1510-dd16-01.

DOI: 10.1557/opl.2013.447

Google Scholar

[7] W.C. Oliver, G.M. Pharr, J. Mater. Res. 7 (1992) 1564-1583.

Google Scholar

[8] G. Patriarche G., E. Le Bourhis, Phil. Mag. 82 (2002) 1953-(1961).

Google Scholar

[9] E. Le Bourhis, Glass mechanics and Technology, Wiley, Weinham, (2007).

Google Scholar

[10] K. Pantzas, G. Patriarche, E. Le Bourhis, D. Troadec, A. Itawi, G. Beaudouin, I. Sagnes, A. Talneau, Appl. Phys. Lett., 103 (2013) 081901.

DOI: 10.1063/1.4817675

Google Scholar