Variation Law of Temperature Field and Pressure Field in Synthesis of SiC by Carbothermal Reduction Method

Abstract:

Through numerical simulation of temperature field and pressure field in synthesis of SiC by carbothermal reduction method, the variation law of temperature and pressure with time in furnace was studied. Research results show that the high temperature isothernal face expands outside gradually with the prolong of the synthesis time, so the temperature field area compatible to the production of SiC increase gradually, but too long synthesis time not only increase energy consumption, but also generate SiC product yield decreased. Compared with single heat furnace, the pressure is comparatively more uniformity in three-heat-source and the pressure is 140~200kPa, which is useful for synthesis of SiC and can prevent furnace spewing. At the bottom of single heat furnace should pay attention to charge ration when charging, adding a little sawdust can increase the porosity and release pressure.

• Periodical: Materials Science Forum (Volumes 809-810)
• Pages: 258-263
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.809-810.258
• Online since: December 2014
• Authors: Yang Li, Jie Chen*
• Keywords: Numerical Simulation, Pressure Filed, Silicon Carbide (SiC), Temperature Field

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