Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals
Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.
Didier Chaussende and Gabriel Ferro
Y. X. Cui et al., "Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals", Materials Science Forum, Vols. 821-823, pp. 265-268, 2015