Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals

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Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.

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Periodical:

Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro

Pages:

265-268

Citation:

Y. X. Cui et al., "Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals", Materials Science Forum, Vols. 821-823, pp. 265-268, 2015

Online since:

June 2015

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$38.00

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