Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals

Abstract:

Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 265-268
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.265
• Online since: June 2015
• Authors: Ying Xin Cui, Xiao Bo Hu*, Xian Gang Xu
• Keywords: Infrared Reflectivity, Infrared Transmission

References

[1] A. S. Bakin and S. I. Dorozhkin, Mater. Sci. Forum. 17 (2006).

[2] T. E. Tiwald and J. A. Woollam, Phys. Rev. B. 60, 16 (1999).

[3] Y. X. Yu and J. Lian, Journal Of Shandong University. 41, 2 (2011).

[4] E. Neyret and G. Ferro, Mat Sci Eng B-Solid. 61-62, 253 (1999).

[5] Y. M. Tairov and V. F. Tsvetkov, J. Crystal. Growth. 43 (1978).

[6] H. Mutschke and A.C. Andersen, Astron Astrophys. 1-17 (1999).

[7] P. Lyle and W. J. Choyke, Phys Rev. 123, 813 (1961).

[8] S. Nakashima and T. Kitamura, Appl. Phys. Lett. 93, 121913 (2008).

[9] T. E. Tiwald and J. A. Woollam, Phys Rev. 60, 11466 (1999).

[10] S. Sunkari and M.S. Mazzola, J Eeletron Mater. 34, 320 (2005).