Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments

Sandip Kumar Roy; Konstantin Vassilevski; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.821-823.420

Paper Titles

Shallow and Deep Levels in Al⁺-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
p.403

Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC
p.407

Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices
p.411

About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)
p.416

Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments
p.420

Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts
p.424

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing
p.428

A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing
p.432

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor
p.436

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Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments

Abstract:

Ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performance. Ohmic contacts often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O₂ rich ambient at temperatures of 800 °C or less, affecting the specific contact resistivity (ρ_C) and RMS surface roughness. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOSFET structures. In order to prevent damage during the high-κ formation, a passivation layer capable of protecting the contacts during annealing is required. In this work we have investigated the suitability of PECVD silicon nitride as a passivation layer to protect Ohmic contacts during high temperature, oxygen rich annealing.