Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

Razvan Pascu; Gheorghe Pristavu; Gheorghe Brezeanu; Florin Draghici; Marian Badila; Ion Rusu; Florea Craciunoiu

doi:10.4028/www.scientific.net/MSF.821-823.436

Paper Titles

Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments
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Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts
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Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing
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A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing
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Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor
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Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
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Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC
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Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser
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Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Electrical Characterization of Ni-Silicide...

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

Abstract:

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni₂Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni₂Si). A nearly ideal Schottky device, with the barrier height approaching the high value of 1.7eV, and a slight temperature dependence, was obtained after an annealing at T_A=800°C. This high barrier height proves that Ni₂Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to 450°C. Sensor sensitivity levels between 1.00mV/°C and 2.70 mV/°C have been achieved.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

436-439

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.436

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Online since:

June 2015

Authors:

Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu*, Florin Draghici, Marian Badila, Ion Rusu, Florea Craciunoiu

Keywords:

Ni-Silicide, Schottky Diode, Temperature Sensor, Thermal Annealing

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