Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC

Vinoth Kumar Sundaramoorthy; Yu Lun Song; Renato Amaral Minamisawa

doi:10.4028/www.scientific.net/MSF.821-823.444

Paper Titles

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing
p.428

A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing
p.432

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor
p.436

Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
p.440

Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC
p.444

Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser
p.448

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate
p.452

Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities
p.456

Characterization of Inhomogeneity in SiO₂ Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
p.460

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Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC

Abstract:

The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping concentration of ~1E18 cm^-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti (20nm)/Ni (100nm) contact were found to have Ohmic behavior with comparable specific contact resistance (~4.3 to 5.3×10^-4 Ωcm²) after annealing at 1100 °C. Ti (10nm)/Ni (100nm) contact annealed at 500 °C and 600 °C was also demonstrated as Schottky contact to 4H n-SiC layers.