Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.821-823.456

Paper Titles

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Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Influence of Conduction-Type on Thermal Oxidation...

Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

Abstract:

It was discovered that the oxidation rate for SiC depended on the conduction type. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2×10¹⁶ cm^-3 to 1×10¹⁹ cm^-3, and aluminum doping (p-type) in the range from 2×10¹⁵ cm^-3 to 1×10¹⁹cm^-3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC.

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Materials Science Forum (Volumes 821-823)

Pages:

456-459

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.456

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Online since:

June 2015

Authors:

Takuma Kobayashi*, Jun Suda, Tsunenobu Kimoto

Keywords:

Conduction Type, Doping Density, Linear Rate Constant, Oxidation, Parabolic Rate Constant, Silicon Dioxide (SiO₂), Spectroscopic Ellipsometry

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References

[1] J. A. Cooper, Jr., Physica Status Solidi (a) 162, 305 (1997).

Google Scholar

[2] V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz, Physica Status Solidi (a) 162, 321 (1997).

Google Scholar

[3] T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, and H. Matsunami. Jpn. J. Appl. Phys. 44, 1213 (2005).

Google Scholar

[4] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).

DOI: 10.1109/55.915604

Google Scholar

[5] Y. Song, S. Dahr, L. C. Feldman, G. Chung, and J. R. Williams, J. Appl. Phys. 95, 4953 (2004).

Google Scholar

[6] B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).

Google Scholar

[7] K. Ueno, Physica Status Solidi (a) 162, 299 (1997).

Google Scholar

[8] K. Ueno, and Y. Seki, Jpn. J. Appl. Phys. 33, 1121(1994).

Google Scholar

[9] B. K. Daas, M. M. Islam, I. A. Chowdhury, F. Zhao, T. S. Sudarshan, and M. V. S. Chandrashekhar, IEEE Trans. Electron Devices 58 , 115 (2011).

DOI: 10.1109/ted.2010.2088270

Google Scholar

[10] E. D. Palik, Handbook of Optical Constants of Solids, (Academic Press, 1997).

Google Scholar

[11] B. E. Deal, J. Electrochem. Soc. 110, 527(1963).

Google Scholar

[12] J. R. Ligenza and W. G. Spitzer, J. Phys. Chem. Solids 14, 131(1960).

Google Scholar

[13] R. H. Kikuchi and K. Kita, Appl. Phys. Lett. 104, 052106 (2014).

Google Scholar

[14] S. M. Sze and ‎K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, (John Wiley & Sons, 2007).

Google Scholar

[15] M. Bockstedte, A. Mattausch, and O. Pankratov, Phys. Rev. B 68, 205201 (2003).

Google Scholar