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Paper Titles
Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities
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Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching
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Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
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Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching

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Abstract:

This work reports about influence of step bunching of SiC epitaxial-wafer surface on Fowler-Nordheim (F-N) tunneling emission current of SiC-MOS capacitor. We have measured the effective barrier height (ΦB) of SiO2/SiC interface, and estimated the deterioration factor of the effective ΦB on step bunching surface by calculating the local tunneling emission currents. Step bunching fluctuates the gate oxide thickness. The effective ΦB value can be successively derived using our proposed partitioned model in which constant ΦB value of flat surface is used. The fluctuation of the oxide film thickness results in the convergence of F-N tunneling emission currents at the thinner oxide in the MOS capacitor.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

472-475

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.472

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Online since:

June 2015

Authors:

Keiichi Yamada*, Osamu Ishiyama, Hideki Sako, Junji Senzaki, Makoto Kitabatake

Keywords:

Effective Barrier Height, F-N Tunneling Emission Current, Oxide Thickness Fluctuation, Step Bunching

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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