Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

A.I. Mikhaylov; Alexey V. Afanasyev; V.V. Luchinin; Sergey A. Reshanov; Adolf Schöner; Lars Knoll; Renato Amaral Minamisawa; Giovanni Alfieri; Holger Bartolf

doi:10.4028/www.scientific.net/MSF.821-823.480

Paper Titles

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
p.464

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC
p.468

Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching
p.472

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements
p.476

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces
p.480

Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
p.484

Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
p.488

Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
p.492

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.496

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Inversion-Channel MOS Devices for Characterization...

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces

Abstract:

Electrical properties of the gate oxides thermally grown in N₂O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2014

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

480-483

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.480

Citation:

Cite this paper

Online since:

June 2015

Authors:

A.I. Mikhaylov*, Alexey V. Afanasyev, V.V. Luchinin, Sergey A. Reshanov, Adolf Schöner, Lars Knoll, Renato Amaral Minamisawa, Giovanni Alfieri, Holger Bartolf

Keywords:

Capacitance, Conductance, C-V Measurement, Gate Oxide, Inversion-Channel MOS Devices, MOS Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] E.H. Nicollian and J.R. Brews, MOS Physics and Technology (John Wiley and Sons, USA, 1982), chap. 8, p.319.

Google Scholar

[2] S.T. Sheppard, M.R. Melloch, J.A. Cooper, IEEE Transactions on Electron Devices 41, 1257 (1994).

Google Scholar

[3] Y. Wang, K. Tang, T. Khan, M.K. Balasubramanian, H. Naik, W. Wang, T.P. Chow, IEEE Transactions on Electron Devices 55, 2046 (2008).

Google Scholar

[4] R. Esteve, S.A. Reshanov, S. Savage, M. Bakowski, W. Kaplan, S. Persson, A. Schöner and C. -M. Zetterling, J. Electrochem. Soc. 158, H496-H501 (2011).

DOI: 10.1149/1.3556119

Google Scholar