Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

Yuki Mori; Mieko Matsumura; Hirotaka Hamamura; Toshiyuki Mine; Akio Shima; Renichi Yamada; Yasuhiro Shimamoto

doi:10.4028/www.scientific.net/MSF.821-823.468

Paper Titles

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate
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Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities
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Characterization of Inhomogeneity in SiO₂ Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
p.460

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
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Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC
p.468

Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching
p.472

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements
p.476

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces
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Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Direct Observation of Dielectric Breakdown at...

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

Abstract:

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

468-471

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.468

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Online since:

June 2015

Authors:

Yuki Mori*, Mieko Matsumura, Hirotaka Hamamura, Toshiyuki Mine, Akio Shima, Renichi Yamada, Yasuhiro Shimamoto

Keywords:

4H-SiC, Dielectric Breakdown, Power Loss Reduction, Step-Bunching

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