Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

Stefan Noll; Martin Rambach; Michael Grieb; Dick Scholten; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.821-823.476

Paper Titles

Characterization of Inhomogeneity in SiO₂ Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
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Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
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Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC
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Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching
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Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements
p.476

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces
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Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
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Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
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Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Influence of Annealing, Oxidation and Doping on...

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

Abstract:

Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can be a result of the expected very high density of interface states near the conduction band . In the current work, the effect of the post implantation annealing temperature, the thermal oxidation and the nitrogen doping of the n-epi layer on the density of these interface traps is investigated using capacity-conductance measurements. Instead of the usage of very high frequencies as used in , in this investigation the measurements were performed in liquid nitrogen to decrease the recharging times of the interface traps.Due to the different processing the samples showed a wide spreading of the inversion channel mobility. The conductance measurements show a characteristic peak caused by the conduction band near interface traps especially for the low temperature measurements. But these traps could not be correlated to the mobility. Instead, a correlation to the nitrogen doping of the epi layer could be observed.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

476-479

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.476

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Online since:

June 2015

Authors:

Stefan Noll*, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, Lothar Frey

Keywords:

4H-SiC MOSFET, Dit, Interface Trap, Near Interface Traps, Threshold Voltage

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