Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

Krystian Krol; Mariusz Sochacki; Marcin Turek; Jerzy Żuk; Pawel Borowicz; Dominika Teklińska; Piotr Konarski; Maciej Miśnik; Alina Domanowska; Anna Michalewicz; Jan Szmidt

doi:10.4028/www.scientific.net/MSF.821-823.496

Paper Titles

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces
p.480

Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
p.484

Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
p.488

Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
p.492

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.496

Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
p.500

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
p.504

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
p.508

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

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Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure

Abstract:

This paper describes the effects of phosphorus implantation into n-type 4H-SiC substrate prior to standard dry oxidation process. Phosphorus incorporation has been reported to be one of the most efficient means of increasing SiC MOSFET field mobility however the physical basis of this phenomenon is still not clear. The aim of this research is to investigate the influence of phosphorus implantation on trap density profile close to conduction band of silicon carbide and to gain understanding of physical processes responsible for observed trap density improvement in phosphorus related oxidation technologies of silicon carbide.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

496-499

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.496

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Online since:

June 2015

Authors:

Krystian Krol*, Mariusz Sochacki, Marcin Turek, Jerzy Żuk, Pawel Borowicz, Dominika Teklińska, Piotr Konarski, Maciej Miśnik, Alina Domanowska, Anna Michalewicz, Jan Szmidt

Keywords:

Phosphorus Implantation, Thermal Oxidation

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