Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases

Yoshiyuki Akahane; Kyosuke Kimura; Takuo Kano; Yukimune Watanabe; Tomohiko Yamakami; Shinji Fujimaki; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.821-823.504

Paper Titles

Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
p.488

Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
p.492

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.496

Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
p.500

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
p.504

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
p.508

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Plasma Nitridation of 4H-SiC by Glow Discharge of...

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases

Abstract:

The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure.

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Materials Science Forum (Volumes 821-823)

Pages:

504-507

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.504

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Online since:

June 2015

Authors:

Yoshiyuki Akahane, Kyosuke Kimura, Takuo Kano, Yukimune Watanabe, Tomohiko Yamakami, Shinji Fujimaki, Kiichi Kamimura*

Keywords:

MIS, Nitride, Plasma

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