MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers

Alberto Salinaro; Kassem Alassaad; Dethard Peters; Peter Friedrichs; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.821-823.512

Paper Titles

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.496

Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
p.500

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
p.504

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
p.508

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823MOS Interface Characteristics of In Situ Ge-Doped...

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers

Abstract:

We report on the electrical characterization of the Metal-Oxide-Semiconductor (MOS) interfacerealized on in-situ Ge-doped n-type 4H-SiC epilayers grown by Chemical Vapour Deposition(CVD). In order to study the relevance of this novel material for MOSFET technology, and in particularwhether the Ge presence deteriorates the SiC/SiO2 interface, we investigated the electrical propertiesof MOS capacitors realized on this novel substrate. Capacitance-Voltage measurements, performedto determine the quality of the SiC/SiO2 interface, show that the interface traps concentration is notincreased by the Ge content. The current through the oxide layer, monitored to study the bulk oxidequality and the tunneling mechanisms, indicates that Fowler-Nordheim conduction occurs and that thesubstrate-to-oxide barrier for electrons is comparable to the reported values for the SiC/SiO2 system.

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Materials Science Forum (Volumes 821-823)

Pages:

512-515

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.512

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Online since:

June 2015

Authors:

Alberto Salinaro*, Kassem Alassaad, Dethard Peters, Peter Friedrichs, Gabriel Ferro

Keywords:

4H-SiC, C-V Measurement, Ge-Doped SiC, Germanium, Interface State Density, MOS Capacitor

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