Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices

Dirk Lewke; Karl Otto Dohnke; Hans Ulrich Zühlke; Mercedes Cerezuela Barreto; Martin Schellenberger; Anton J. Bauer; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.821-823.528

Paper Titles

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Thermal Laser Separation – A Novel Dicing...

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices

Abstract:

One challenge for volume manufacturing of 4H-SiC devices is the state-of-the-art wafer dicing technology – the mechanical blade dicing which suffers from high tool wear and low feed rates. In this paper we discuss Thermal Laser Separation (TLS) as a novel dicing technology for large scale production of SiC devices. We compare the latest TLS experimental data resulting from fully processed 4H-SiC wafers with results obtained by mechanical dicing technology. Especially typical product relevant features like process control monitoring (PCM) structures and backside metallization, quality of diced SiC-devices as well as productivity are considered. It could be shown that with feed rates up to two orders of magnitude higher than state-of-the-art, no tool wear and high quality of diced chips, TLS has a very promising potential to fulfill the demands of volume manufacturing of 4H-SiC devices.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

528-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.528

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Online since:

June 2015

Authors:

Dirk Lewke*, Karl Otto Dohnke, Hans Ulrich Zühlke, Mercedes Cerezuela Barreto, Martin Schellenberger, Anton J. Bauer, Heiner Ryssel

Keywords:

Dicing Techniques, Kerf Less, TEM Analysis, Thermal Laser Separation

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