Effect of Surface Damage on SiC Wafer Shape

Kevin Moeggenborg; Thomas Kegg; Christopher Parfeniuk; Thomas Stoney; Jeffrey Quast

doi:10.4028/www.scientific.net/MSF.821-823.545

Paper Titles

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
p.563

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Effect of Surface Damage on SiC Wafer Shape

Effect of Surface Damage on SiC Wafer Shape

Abstract:

The flatness of a silicon carbide wafer in terms of bow and warp is the result of the combination of factors both material and process related. Sub-surface damage (SSD) from the wafering process steps can be considered as a thin film under compressive stress on the wafer surface. SSD is generally decreased with each subsequent processing step after the multiwire saw. Single-sided process steps can produce very different levels of SSD on opposing wafer surfaces, leading to high bow and warp values. The present study investigates the effects of SSD on wafer flatness at various process steps as well as methods to minimize shape effects due to SSD during and after processing.