Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Dairi Yajima; Ken Nakagomi; Hitoshi Habuka; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.821-823.553

Paper Titles

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
p.563

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
p.567

Si_1-xC_x/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current
p.571

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Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Abstract:

A SiC dry etcher using chlorine trifluoride (ClF₃) gas was evaluated, particularly about the etching rate distribution. At 100%, the etching rate was high in the center region and was low in the outer region. However, that at 20% showed the opposite profile. This difference was considered to be due to the chlorine trifluoride gas distribution which was built above the gas distributor.