Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization

Hirokazu Fujiwara; A. Onogi; Takashi Katsuno; Tomoo Morino; Takeshi Endo; Yasuhisa Sano

doi:10.4028/www.scientific.net/MSF.821-823.567

Paper Titles

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
p.563

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
p.567

Si_1-xC_x/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current
p.571

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
p.575

Fabrication and Application of 1.7KV SiC-Schottky Diodes
p.579

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
p.583

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Improvement of I-V Characteristics of Schottky...

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization

Abstract:

Leakage current points in 4H-SiC Schottky barrier diodes (SBDs) were found to be in the same location as rough surface morphologies. Rough surfaces after activation annealing at the Schottky interface of diodes were removed by chemical mechanical polishing (CMP) or catalyst-referred etching (CARE). As a result, this study succeeded in reducing the leakage current and barrier height variation of 1.2 kV SBDs by eliminating surface roughness.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.567

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Online since:

June 2015

Authors:

Hirokazu Fujiwara*, A. Onogi, Takashi Katsuno, Tomoo Morino, Takeshi Endo, Yasuhisa Sano

Keywords:

Catalyst-Referred Etching, Leakage Current, Polishing, Schottky Barrier Diode (SBD)

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