Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

A.Z. Zhang; Sergey A. Reshanov; Adolf Schöner; Wlodek Kaplan; Norbert Kwietniewski; Jang Kwon Lim; Mietek Bakowski

doi:10.4028/www.scientific.net/MSF.821-823.549

Paper Titles

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
p.563

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
p.567

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Planarization of Epitaxial SiC Trench Structures...

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

Abstract:

In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.