Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

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Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this paper, CARE was applied to the planarization of 6-inch silicon carbide (SiC) wafers, and removal properties were investigated. The etching rate was about 20nm/h, which is almost equal to that of 2-inch SiC wafer (16 nm/h). The rms roughness was reduced along with the removal depth, and step-terrace structure was observed in whole area of the on-axis wafer surface.

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Periodical:

Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro

Pages:

537-540

DOI:

10.4028/www.scientific.net/MSF.821-823.537

Citation:

A. Isohashi et al., "Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching", Materials Science Forum, Vols. 821-823, pp. 537-540, 2015

Online since:

June 2015

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$38.00

* - Corresponding Author

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