Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

Ai Isohashi; Yasuhisa Sano; Tomohisa Kato; Kazuto Yamauchi

doi:10.4028/www.scientific.net/MSF.821-823.537

Paper Titles

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Planarization of 6-Inch 4H-SiC Wafer Using...

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

Abstract:

Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this paper, CARE was applied to the planarization of 6-inch silicon carbide (SiC) wafers, and removal properties were investigated. The etching rate was about 20nm/h, which is almost equal to that of 2-inch SiC wafer (16 nm/h). The rms roughness was reduced along with the removal depth, and step-terrace structure was observed in whole area of the on-axis wafer surface.

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Materials Science Forum (Volumes 821-823)

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537-540

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.537

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Online since:

June 2015

Authors:

Ai Isohashi*, Yasuhisa Sano, Tomohisa Kato, Kazuto Yamauchi

Keywords:

6-Inch, Catalyst, Etching, Planarization, Platinum, Polishing

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